| PART |
Description |
Maker |
| 2SC2235TM |
0.8A , 120V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2SD667A |
1A , 120V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| WT4321 WT4424 WT4415 WT4416 WT4425 WT4432 WT4433 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 325A I(C) | FBASE-F
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 325A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 275A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 275A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 325A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 375A I(C) | STR-3/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 375A I(C) | STR-3/4
|
|
| 2SB688 2SB688O 2SB688R |
POWER TRANSISTORS(8A/120V/80W)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR
POWER TRANSISTORS(8A,120V,80W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SC1845 2SC1845U |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92
NPN SILICON TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| UDT1605G-AB3-R UDT1605L-AB3-R |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Unisonic Technologies
|
| FCX605TA |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Diodes Incorporated
|
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2SC2240BL 2SC2240GR |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 100mA的一（c）|2
|
Hantronix, Inc.
|
