| PART |
Description |
Maker |
| M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| EBJ21UE8BBS0-AE-F |
256M X 64 DDR DRAM MODULE, ZMA204
|
ELPIDA MEMORY INC
|
| EBJ21EE8BAWA-DG-E |
256M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
| EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM
256M X 4 DDR DRAM, 0.4 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory
ELPIDA MEMORY INC
|
| HMT351R7CFR4A-H9 HMT325R7CFR8A-H9 |
512M X 72 DDR DRAM MODULE, DMA240
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| M392B5673GB0-CK0 M392B2873GB0-CK0 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
128M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| M392B5270DH0-CK0 M392B5773DH0-CF8 |
512M X 72 DDR DRAM MODULE, 20 ns, DMA240
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| NT2GC72B8PA1NF-CG NT2GC72B8PA0NF-CG |
256M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, UDIMM-240
|
Nanya Technology, Corp.
|
| MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90
128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
| HMT351V7BMR4C-G7 HMT351V7BMR4C-H9 HMT112V7BFR8C-G7 |
240pin DDR3 SDRAM VLP Registered DIMM
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
|
