| PART |
Description |
Maker |
| EDD1232AABH-6B-E EDD1232AABH-7A-E |
GT 2C 2#0 SKT PLUG 4M X 32 DDR DRAM, 0.7 ns, PBGA144
GT 3C 3#16S PIN PLUG 4M X 32 DDR DRAM, 0.75 ns, PBGA144
|
Elpida Memory, Inc.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| HYB18T256321F-20 |
8M X 32 DDR DRAM, 0.4 ns, PBGA144 11 X 11 MM, ROHS COMPLIANT, PLASTIC, MO-216, TFBGA-144
|
Infineon Technologies AG
|
| NT5DS16M16BW-6K |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|
| WED3EL7216S7BC |
16M X 72 DDR DRAM, 0.75 ns, PBGA219
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| A48P4616 |
16M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
| V58C2256164SCE5BI |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| HYMD116G725A8-H |
16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
