PART |
Description |
Maker |
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BBY55-02W BBY5502W Q62702-B0913 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(极好的线性高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
BBY55 BBY55-02V BBY55-03W BBY55-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package Silicon Tuning Diodes
|
INFINEON[Infineon Technologies AG]
|
BB837 BB857 |
Varactordiodes - Silicon tuning diode for SAT tuning units
|
INFINEON[Infineon Technologies AG]
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
KDV269 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC Holdings KEC(Korea Electronics)
|
KDV1471 |
FM Tuning VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDV214E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|