| PART |
Description |
Maker |
| IRG4IBC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRGPF20F |
900V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| GB100DA60UP |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
|
Vishay Siliconix
|
| IRG4PC50S-P |
600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 package
|
International Rectifier
|
| IRG4PSC71K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| CAT34WC02 |
2-kb, 100 kHz @ 1.7 V & 400 kHz @ 5.0 V
|
Catalyst Semiconductor
|
| IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
