| PART |
Description |
Maker |
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
SILICON NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
