| PART |
Description |
Maker |
| S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
| HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
| MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT48LC32M16A2 MT48LC128M4A2 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| S71WS512PD0HF3HL0 S71WS512PD0HF3HR0 S71WS512PD0HF3 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
|
SPANSION[SPANSION]
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
TRIMMER, 15 TURN 20K
CONN HEADER 12POS DL PCB 30GOLD
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
