| PART |
Description |
Maker |
| FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR
3500 V, GATE TURN-OFF SCR
1200 V, GATE TURN-OFF SCR
3600 V, GATE TURN-OFF SCR
2300 V, GATE TURN-OFF SCR
2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
| 5SGA30J4502 |
Asymmetric Gate turn-off Thyristor 1460 A, 4500 V, GATE TURN-OFF SCR
|
ABB, Ltd.
ABB[The ABB Group]
|
| SG1500U22 |
550 A, 1600 V, GATE TURN-OFF SCR
|
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| GCU35AB-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR
1554 A, 1600 V, SCR
1995 A, 600 V, SCR
1465 A, 1600 V, SCR
1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
|
