| PART |
Description |
Maker |
| IRF1405ZL-7PPBF IRF1405ZSTRL-7PPBF IRF1405ZS-7PPBF |
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CA LEAD FREE, PLASTIC PACKAGE- 7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, D2PAK-7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET D2PAK-7
|
Analog Devices, Inc.
International Rectifier, Corp.
ITT, Corp.
|
| STB180N10F3 STP180N10F3 |
N-channel 100 V, 4.0 mヘ, 120 A STripFET⑩ Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 mΩ, 120 A STripFET?/a> Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 m楼?, 120 A STripFET垄芒 Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 mΩ, 120 A STripFET Power MOSFET D2PAK, TO-220
|
STMicroelectronics
|
| BUK663R7-75C |
N-channel TrenchMOS FET 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| 2SK2753-01 |
N-channel MOS-FET 50 A, 120 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| C9732DK-1111 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 × 120 mm
|
Hamamatsu Corporation
|
| NVMFS5832NLT1G NVMFS5832NLT3G |
40 V, 4.2 m, 120 A, Single N?Channel
|
ON Semiconductor
|
| HCD66775 |
120-Channel Gate Driver
|
Hitachi
|
| EH2725TS-120.000M |
OSCILLATORS 25PPM 0 70 2.5V 4 120.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH2545ETTTS-120.000M |
OSCILLATORS 50PPM -40 85 5.0V 4 120.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, HCMOS/TTL OUTPUT
|
Ecliptek, Corp.
|
| DN2540N3P003 |
120 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SUPERTEX INC
|
|
