| PART |
Description |
Maker |
| NGD15N41CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220
|
ON Semiconductor
|
| 041083053001WG 4108309 041083046001WG 041083050001 |
Power Relay 410 83 3 mm
|
Tyco Electronics
|
| LF-410 LF-422 |
(LF-410 / LF-422)Wideband RF/Pulse Transformers
|
ETC
|
| BZX84C3 BZX84C36 BZX84C39 |
Silicon 410 mWatt Zener Diodes
|
Micro Commercial Components Corp.
|
| SIOV-S20K1000 |
RESISTOR, VOLTAGE DEPENDENT, 1465 V, 410 J, THROUGH HOLE MOUNT
|
SIEMENS AG
|
| LZ2353 LZ2353B LZ2354BJ |
1/3-type CCD Area Sensors with 410 k Pixels 1/3-type传感器与防治荒漠化面410万像
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| LZ9FD34 |
Single-chip Driver IC for 270 k/320 k/ 410 k/470 k-pixel B/W CCDs
Single-chip Driver IC for 270 k/320 k/410 k/470 k-pixel B/W CCDs
|
Sharp Electrionic Component...
Sharp Electrionic Components
|
| GWF410 |
Flex 410 FACP, 10 zones, expandable to 20 and 30 zones, 120 VAC
|
Gamewell-FCI by Honeywell
|
| DT210N TT210N TD210N14KOF |
Netz-Thyristor-Modul Phase Control Thyristor Module
410 A, 1400 V, SCR
|
eupec GmbH
INFINEON TECHNOLOGIES AG
|
| M64080GP |
410 MHz 2System 1Chip PLL Frequency Synthesizer
410MHz 2SYSTEM 1CHIP PLL FREQUENCY SYNTHESIZER
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
