| PART |
Description |
Maker |
| APM4048DU4C-TRG |
7.5 A, 40 V, 0.033 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN PACKAGE-5
|
Anpec Electronics, Corp.
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| JANS1N5712UR-1 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N |
Schottky Rectifier
5-V Precision Micropower Shunt Voltage Reference, 1% accuracy 3-SOT-23 -40 to 125 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
SCHOTTKY BARRIER DIODES 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| NP32N055ILE NP32N055HLE NP32N055HLE-AZ NP32N055 NP |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
32 A, 55 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
Nch MOS FET for High-current switching
|
Cypress Semiconductor, Corp.
NEC[NEC]
|
| HT97P0.47UF/-205000V HT97P6.8NF/-203500V HT97P0.33 |
CAPACITOR, FILM/FOIL, POLYESTER, 5000 V, 0.47 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 3500 V, 0.0068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 5000 V, 0.33 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 1500 V, 0.33 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 1500 V, 0.1 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 5000 V, 0.1 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 3500 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 5000 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 2500 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 12500 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 1500 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 15000 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 7500 V, 0.0033 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, FILM/FOIL, POLYESTER, 7500 V, 0.033 uF, THROUGH HOLE MOUNT AXIAL LEADED
|
ITT, Corp.
EXXELIA Group
Ecliptek, Corp.
Rhombus Industries, Inc.
|
| ELJNK33NAF |
1 ELEMENT, 0.033 uH, GENERAL PURPOSE INDUCTOR, SMD
|
PANASONIC CORP
|
|
