| PART |
Description |
Maker |
| FQD20N06LTF FQD20N06LTM |
17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
| MTW32N20E MTW32N20E_D ON2691 |
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| 2SK2896-01L 2SK2896-01S |
CAN2DC-79SF0 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Connector,D-Shell,Cable Mnt,PLUG,79 Contacts,SKT,0.075 Pitch,#4-40 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| APT50M75JLL |
POWER MOS 7 500V 52A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| AS8S128K32Q1-35_883C AS8S128K32Q1-35_IT AS8S128K32 |
128K x 32 SRAM SRAM MEMORY ARRAY
128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 0.140 INCH HEIGHT, CERAMIC, QFP-68
|
http://
Austin Semiconductor, Inc
|
| AP2305CGN-HF AP2305CGN-HF-14 |
3.2 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Simple Drive Requirement
Simple Drive Requirement, Small Package Outline
|
Advanced Power Electronics, Corp.
Advanced Power Electron...
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
|
