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MMFT2N25E-D - TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate

MMFT2N25E-D_4070830.PDF Datasheet


 Full text search : TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate


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TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
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From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
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MOTOROLA[Motorola Inc]
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From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
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From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
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