| PART |
Description |
Maker |
| HYS72T256322HP-3.7-A HYS72T256322HP-3S-A HYB18T1G4 |
240-Pin Dual-Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022HR-3.7-A HYS72T512022HR-3S-A HYS72T512 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256000ER-3.7-B HYS72T256000ER-5-B HYS72T2560 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64300HP-3.7-A HYS72T64300HP-3S-A HYS72T12832 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HP2.5-B HYS72T128020HP25F-B HYS72T2562 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022HR HYS72T256023HR |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64001HR HYB18T256400AF |
240-Pin Registered DDR2 SDRAM Modules
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 70287-1007 0702871007 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 0702871220 70287-1220 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
|
Molex Electronics Ltd.
|
