| PART |
Description |
Maker |
| BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
| AP2012F3CT |
1.2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
KINGBRIGHT CORP
|
| SFH4350-BW |
3 mm, 1 ELEMENT, INFRARED LED, 860 nm
|
|
| TSIP4401AS12 TSIP4401AS21 TSIP4401AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 925 nm
|
Atmel, Corp.
|
| TSMF1040 |
1.9 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
VISHAY SEMICONDUCTORS
|
| TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| XZTHI54W |
1.3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
SUNLED COMPANY LTD
|
|
