| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| R878 R87810 L9337 |
High power LED for optical switches
4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|
| GL480Q |
1.6 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| OP280K |
2.4 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
OPTEK TECHNOLOGY INC
|
| GL620T |
1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| IR95-21C/TR7 |
1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
EVERLIGHT ELECTRONICS CO LTD
|
| TSIP4401AS12 TSIP4401AS21 TSIP4401AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 925 nm
|
Atmel, Corp.
|
| 5202CS12Z 5202CS21 |
5 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
