| PART |
Description |
Maker |
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| 2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
| TIP142 TIP140 TIP147 |
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218
10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
|
http://
Central Semiconductor Corp
|
| TIP112TU |
NPN Epitaxial Silicon Darlington Transistor; Package: TO-220; No of Pins: 3; Container: Rail 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MJF122 MJE122 ON2045 MJF127 MF122 MJE127 |
COMPLEMENTARY SILICON POWER DARLINGTONS 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| FZT853TA |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Diodes, Inc.
|
| CENU05 CENU06 CENU57 CENU07 CEN-U07 CENU55 CENU56 |
SILICON COMPLEMENTARY POWER TRANSISTORS 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| 2SD1024-4100 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
|
| PUA3173 |
4 A, 100 V, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
|
