| PART |
Description |
Maker |
| HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYMP125P72CP4L-C4 HYMP41GP72CNP4L-C4 HYMP41GP72CNP |
240pin DDR2 VLP Registered DIMMs
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| M395T2863QZ4-CE65 M395T2863QZ4-CE68 M395T2863QZ4-C |
128M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE AND ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
BCD Semiconductor Manufacturing, Ltd.
|
| HYMP125S64CR8-C4 HYMP125S64CR8-S5 HYMP125S64CR8-S6 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| W3HG264M72EER665AD7M W3HG264M72EER665AD7MG |
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA244
|
WHITE ELECTRONIC DESIGNS CORP
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT1GD64S8PA0F-6K |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Nanya Technology, Corp.
|
| NT1GT64U8HA0BN-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 GREEN, SODIMM-200
|
Nanya Technology, Corp.
|
| M2N1G64TU8HA2B-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 GREEN, SODIMM-200
|
Nanya Technology, Corp.
|
| M392T2863QZA-CF7 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
|
