PART |
Description |
Maker |
HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M x 72 Bit ECC DRAM Module unbuffered 2M x 64 Bit DRAM Module unbuffered 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM368035GS-60 HYM368035S-60 Q67100-Q3018 HM368035 |
8M x 36 Bit EDO DRAM Module with Parity From old datasheet system 8M x 36-Bit EDO-DRAM Module
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM 4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc. Alliance Semiconductor
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
MB8504E032AA-70SG |
4M X 32 EDO DRAM MODULE, 70 ns, PSMA72
|
FUJITSU LTD
|
HB56SW832DZJ-6L |
8M X 32 EDO DRAM MODULE, 60 ns, DMA72
|
|
VE16418165BTS-6 VE16418165BTSA-7 |
1M X 64 EDO DRAM MODULE, 60 ns, DMA168 1M X 64 EDO DRAM MODULE, 70 ns, DMA168
|
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
|