| PART |
Description |
Maker |
| SSR02C60 SSR02C50 |
2 AMP / 600 V SILICON CARBIDE SCHOTTKY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SSR10C40CTGTVX SSR10C50CTGTVX SSR10C60CTGTVX SSR10 |
10 A / 600 V Schottky Silicon Carbide Centertap Rectifier
|
Solid States Devices, Inc
Solid States Devices, I...
|
| STPSC1206 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| IDD08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
|
