| PART |
Description |
Maker |
| STPSC806 STPSC80609 |
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SML10SIC06SMD |
10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-276AB
|
SEMELAB LTD
|
| SSR10C40CTGTVX SSR10C50CTGTVX SSR10C60CTGTVX SSR10 |
10 A / 600 V Schottky Silicon Carbide Centertap Rectifier
|
Solid States Devices, Inc
Solid States Devices, I...
|
| C3D04060A |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC TO-220, 2 PIN
|
Cree, Inc.
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| C3D06060A |
Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier
|
Cree, Inc
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| MAC210A10 ON0354 MAC210A8-D MAC210A8 |
Silicon Bidirectional Thyristor(10A00V三端双向可控硅晶闸管) 600 V, 10 A, TRIAC, TO-220AB
10AMPERES RMS 600 thru 800 VOLTS
From old datasheet system
Triacs Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC08650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
|
