| PART |
Description |
Maker |
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| IRF610 FN1576 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFF210 FN1887 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| FQN1N50CTA FQN1N50C |
N-Channel QFETMOSFET 500V, 0.38A, 6
N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm
|
Fairchild Semiconductor
|
| 2SK2876-01MR |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IRFK6H450 IRFK6H150 |
66 A, 500 V, 0.067 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
150 A, 100 V, 0.01 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
|
|
| 2SK1937-01 |
SWITCHING DIODE, 85V, SM SOT23 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| NSLC420 |
2.5 A, 500 V, 3.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI CORP
|
| IXFN80N50Q2 |
80 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
|
