PART |
Description |
Maker |
SLD323XT |
High Power Density 1 W Laser Diode From old datasheet system
|
Sony
|
OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 |
PT 3C 3#20 SKT RECP 1.55 m High-Power Laser-Diode DIP Module From old datasheet system 1.55 um High-Power Laser-Diode DIP Module 1.55 レm High-Power Laser-Diode DIP Module 1.55 μm High-Power Laser-Diode DIP Module
|
OKI electronic components OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets]
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ADL-66505TL |
High power laser modules industrial laser markers / measuring instruments Medical application
|
Roithner LaserTechnik G...
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SMB10J6.0 SMB10J6.0A SMB10J6.5 SMB10J6.5A SMB8J8.0 |
High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB垄莽 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
|
Vishay Siliconix http://
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ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
SDC320AD1224 |
High Power Density
|
XP Power Limited
|
5962-9233803MRX 5962-9233803MSX 5962-9233803MXX 59 |
Multirate Laser Driver with Extinction Ratio Control 155Mbps to 2.7Gbps SFF/SFP Laser Driver with Extinction Ratio Control Low-Power, 622Mbps Limiting Amplifiers with Chatter-Free Power Detect for LANs 622Mbps LAN/WAN Laser Driver with Automatic Power Control and Safety Shutdown 2.7Gbps, Low-Power SFP Laser Drivers 保险丝,可编程的PLD
|
限幅放大
|
STP80N06-1 STP80N06-10 4888 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|