| PART |
Description |
Maker |
| BTS244ZE-3062A |
35 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220SMD, 5 PIN
|
SIEMENS AG
|
| STD45NF75 STD45NF75T4 D45NF75 |
N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD45NF75 STD45NF75T4 |
N-CHANNEL 75V - 0.018 OHM -40A DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| PHB65N06LT |
TrenchMOS transistor Logic level FET 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BUZ100-E3045 BUZ100-E3044 BUZ100-E3046 |
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
60 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| NP36N055SLE-E1-AY |
36 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA ROHS COMPLIANT, TO-252, MP-3ZK, 3 PIN
|
International Business Machines, Corp.
|
| FDMS5672 |
N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm 10.6 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| C67078-S3120-A4 BUZ346S2 SIEMENSAG-BUZ346S2 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 58 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| AP4800GYT-HF AP4800GYT-HF-14 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
11.5 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
Simple Drive Requirement, Small Size & Lower Profile
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| AP9972GI |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| APT20M18LVR APT20M18B2VR |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
|
