PART |
Description |
Maker |
HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM)的
|
Hitachi,Ltd.
|
NT5CB64M16DP-CFI |
128M X 8 DDR DRAM, 0.255 ns, PBGA96
|
NANYA TECHNOLOGY CORP
|
K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 0603 18 OHM 1/16W RESISTOR, 1K, 1%, SMT 0603 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
IMSH4GP23A1F1C-08E IMHH4GP23A1F1C-08E IMSH2GP13A1F |
512M X 72 DDR DRAM MODULE, DMA240 GREEN, DIMM-240 256M X 72 DDR DRAM MODULE, DMA240
|
Qimonda AG
|
MT41K256M4JP-125G |
256M X 4 DDR DRAM, PBGA78
|
|
M312L5720CZ0-CA2 |
256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
|
M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
W3HG2128M72EER665PD4IMG W3HG2128M72EER534PD4MG W3H |
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA200 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA200
|
WHITE ELECTRONIC DESIGNS CORP MICROSEMI CORP-PMG MICROELECTRONICS
|
H5TQ1G83AFPR-G8C H5TQ1G63AFPR-G8C H5TQ1G43AFPR-G8C |
128M X 8 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78 64M X 16 DDR DRAM, PBGA96 HALOGEN FREE, FBGA-96 256M X 4 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5 |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200 256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
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