| PART |
Description |
Maker |
| AS7C33256NTD32_36A AS7C33256NTD32-36A.V.2.1 AS7C33 |
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 3.8 ns, PQFP100
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| CY7C1356A-166AC CY7C1354A-133BGCT |
512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K X 36 ZBT SRAM, 4.2 ns, PBGA119
|
CYPRESS SEMICONDUCTOR CORP
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| MT55L512V18FF-11 MT55L512V18FF-12 MT55L256L36FT-10 |
512K X 18 ZBT SRAM, 8.5 ns, PBGA165
512K X 18 ZBT SRAM, 9 ns, PBGA165
256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PQFP100
256K X 36 ZBT SRAM, 8.5 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
|
IDT
Integrated Device Technology
|
| AS7C33256NTD18B AS7C33256NTD18B.V.1.5 AS7C33256NTD |
3.3V 256K x 8 Pipelined SRAM with NTD 256K X 18 ZBT SRAM, 3 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器，流量，通过输出
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| GS881Z32BD-200IV GS881Z36BD-200IV GS881Z18BD-200IV |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C1352G-250AXI CY7C1352G CY7C1352G-133AXC CY7C13 |
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1356C-166BZI CY7C1356C-166BZXI CY7C1356C-166BZ |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS880Z36BGT-300 GS880Z36BT-150I |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 5 ns, PQFP100
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IS61NVF51236-6.5TQL IS61NVF51236-6.5TQL-TR IS61NVF |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
|
