| PART |
Description |
Maker |
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| HYMD232646DP8-H HYMD232726DP8-H HYMD264726DP8-H HY |
1184pin Unbuffered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
16M X 16 DDR DRAM MODULE, 0.7 ns, DMA184
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
512Mb: x4, x8, x16 DDR SDRAM Features
128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| K4T51163QI-HIE70 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
|
| E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MT46H32M32LFCM-75IT |
32M X 32 DDR DRAM, 6 ns, PBGA90
|
|
| H5DU2582GTR-E3C |
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| W3E32M72SR-250SBC |
32M X 72 DDR DRAM, 0.8 ns, PBGA208
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
|
