| PART |
Description |
Maker |
| GS841Z18AGT-180 GS841Z18AGT-180I |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| IDT70V9099L12PF IDT70V9099L12PFI IDT70V9199L9PFI I |
From old datasheet system
128K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
128K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 128Kx9/x8同步流水线双端口静态RAM
Small Signal Diode 高.3 128Kx9/x8同步流水线双端口静态RAM
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| GS8322ZV18GE-225 GS8322ZV18GE-225I GS8322ZV18GB-22 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7.5 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119
36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209
|
GSI Technology, Inc.
|
| IDT709079L15PF IDT709079S15PF8 IDT709089S9PF IDT70 |
HIGH-SPEED 32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
64K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
32K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
|
Integrated Device Technology, Inc.
IDT
|
| IDT70V9179L 70V9179_DS_12544 IDT70V9179L9PFI IDT70 |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IDT70V9189L9PFI IDT70V9179L12PFI IDT70V9179L6PFI I |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| GS8162Z18BB-200V |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8162Z18B-133I GS8162Z18B-150I GS8162Z18B-166 GS8 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
