| PART |
Description |
Maker |
| AD7923BRU EVAL-AD7923CB2 AD7923 |
Four Wall Header; No. of Contacts:60; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No
4-Channel 200 kSPS 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel, 200 kSPS, 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP
|
ADC
AD[Analog Devices]
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| SFF9240M |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid State Devices, Inc.
|
| STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| BSP121 |
N-channel enhancement mode vertical D-MOS transistor 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BSS138W-7-F |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| AD5535ABC AD5535 |
32-Channel, 14-Bit DAC with Fullscale Output Voltage Programmable from 50 V to 200 V
32-Channel, 14-Bit DAC with Full-Scale Output Voltage Programmable from 50 V to 200 V
|
AD[Analog Devices]
|
| ZVP4424A ZVP4424ASTOA |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
|
Diodes Incorporated
Diodes, Inc.
|
| BSS138DW09 BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MOSFET DUAL N-CHAN 50V SOT363 200 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
|
