| PART |
Description |
Maker |
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| W3EG72125S202AJD3MG |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HYMP512U64CP8-S6 |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
|
HYNIX SEMICONDUCTOR INC
|
| M392B5673GB0-CK0 M392B2873GB0-CK0 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
128M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D256220GBR-7-B HYS72D256320GBR-7-B HYS72D1283 |
184 - Pin Registered Double-Data-Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
Qimonda AG
|
| IMSH1GU13A1F1C-10F IMSH1GU13A1F1C-10G IMSH1GU13A1F |
128M X 64 DDR DRAM MODULE, DMA120 GREEN, UDIMM-120
|
Qimonda AG
|
| NT1GT64U8HA0BN-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 GREEN, SODIMM-200
|
Nanya Technology, Corp.
|
