| PART |
Description |
Maker |
| HYE18P16161AC-L70 HYE18P16161AC-70 HYE18P16161AC-8 |
16M Asynchronous/Page CellularRAM
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 PLASTIC, VFBGA-48
|
Infineon Technologies A...
Infineon Technologies AG
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG
|
| MX23L12811-1 MX23L12811RC-10 MX23L12811RC-12 MX23L |
NEW 128M-BIT (16M x 8 / 8M x 16) MASK ROM WITH PAGE MODE(TSOP PACKAGE)
|
PROM
MCNIX[Macronix International]
|
| HYB3164400T-60 HYB3165400T-60 HYB3164400T-50 HYB31 |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin 16M X 4 FAST PAGE DRAM, 60 ns, PDSO34
|
SIEMENS AG
|
| BS616LV161 BS616LV1613FC BS616LV1613FC-55 BS616LV1 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Asynchronous 16M(1Mx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| A64S06162AG-70UF A64S06162A A64S06162A-70U A64S061 |
16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| RMBA09501 |
Cellular 2W Base Station PA
Cellular 2 Watt Linear GaAs MMIC Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| TQ5132 |
3V Cellular Band CDMA/AMPS RFA/Mixer IC TELECOM, CELLULAR, RF FRONT END CIRCUIT, PDSO8
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| KMM366F1600BK3 KMM366F1680BK3 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| S29GL512N10FFI013 S29GL512N10FFI012 S29GL256N11TFI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology
|
Spansion, Inc.
SPANSION LLC
|
