| PART |
Description |
Maker |
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| SLA24C01-D-3/P SLA24C02-D-3/P SLA24C02-S-3/P SLA24 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS A G
SIEMENS AG
Siemens Semiconductor Group
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT160 TC58FVB160FT-10 TC58FVB160FT TC58FVB160 |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| DS3902U-515 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO8
|
Maxim Integrated Products, Inc.
|
| MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products
Atmel, Corp.
ON Semiconductor
TE Connectivity, Ltd.
|
| HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group
SIEMENS AG
|
| EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
