| PART |
Description |
Maker |
| PMR370XN |
N-channel uTrenchMOS extremely low level FET
|
NXP
|
| PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMWD19UN PMWD19UN-01 |
DUAL uTRENCHMOS ULTRA LOW LEVEL FET
Dual uTrenchMOS (tm) ultra low level FET 双uTrenchMOSTM）超低水平场效应
From old datasheet system
Dual uTrenchMOS(TM) ultra low level FET
|
NXP Semiconductors
HIROSE ELECTRIC Co., Ltd.
PHILIPS[Philips Semiconductors]
|
| BSH121 |
N-channel TrenchMOS extremely low level FET N沟道TrenchMOS极低电平场效应管
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| GFC260 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| PMK50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| GFC264 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
