| PART |
Description |
Maker |
| PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
|
NXP Semiconductors
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| PBSS4160DS |
60 V 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4230PAN |
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4160PAN PBSS4160PAN-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4160DS-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| 2PB1424 2PB1424115 |
20 V, 3 A PNP low VCEsat (BISS) transistor 20伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
NXP Semiconductors / Philips Semiconductors
|
