| PART |
Description |
Maker |
| K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13 |
512Kx36-bit, 1Mx18-bit QDR SRAM
|
Samsung semiconductor
|
| K7Q161882A |
(K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung semiconductor
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| K7B161835B K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM718V089 KM736V989 |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7P161866A K7P161866A-HC25 K7P161866A-HC30 K7P1618 |
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7P161866A K7P163866A |
(K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM
512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
