| PART |
Description |
Maker |
| STK405-050 STK405-120 STK405-010 STK405-030 STK405 |
2ch AF Power Amplifier (Split Power Supply) 30W 30W min, THD =10%
|
SANYO[Sanyo Semicon Device]
|
| STK433-730-E |
2-channel class AB audio power IC, 30W 30W
|
Sanyo Semicon Device
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MRF157 |
MOS LINEAR RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| 2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
POWER TRANSISTORS(4A/80V/30W)
POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| TIP29C TIP30 TIP30C TIP29 TIP29A TIP29B TIP30A TIP |
POWER TRANSISTORS(1.0A/40-100V/30W)
POWER TRANSISTORS(1.0A,40-100V,30W) 功率晶体管（1.0安培,40 - 100V的提0W
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| TDA7265B |
30W 30W stereo amplifier
|
STMicroelectronics
|
| 5962-05238 5962-05240 5962-05241 5962-05242 5962-0 |
30W Total Output Power 28 Vin 1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238
30W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240
30W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241
30W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242
30W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241
30W Total Output Power 28 Vin 2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package.
|
International Rectifier
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
