| PART |
Description |
Maker |
| AK632256AWG-12 |
262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory 262,144 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| 24C256 IS24C256 IS24C256-2G IS24C256-2GI IS24C256- |
262,144-bit 2-WIRE SERIAL CMOS EEPROM
262,144-bit 2-WIRE SERIAL CMOS EEPROM 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
DIODE ZENER 6.2V 120MW SSSMINI2
262/144-bit2-WIRESERIALCMOSEEPROM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| M57747 |
144-148 MHz 12.5V, 13W, FM MOBILE RADIO
144-148MHz, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M57737 |
144-148 MHz, 12.5V, 30W, FM Mobile Radio
144-148MHz 12.5V,30W,FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| M57726 57726 |
144-148MHz 12.5V,43W,FM MOBILE RADIO
From old datasheet system
144-148MHZ, 12.5V, 43W, FM MOBILE RADIO
144-148MHz 12.5V /43W /FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| M57747 57747 |
144-148MHz / 12.5V / 13W / FM MOBILE RADIO
From old datasheet system
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EP4CE30F23C7N EP4CE10E22C7N EP4CE10E22C9L EP4CE10F |
FPGA, 1803 CLBS, 472.5 MHz, PBGA484 23 X 23 MM, 1 MM PITCH, LEAD FREE, FBGA-484
FPGA, 645 CLBS, 472.5 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 265 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 472.5 MHz, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
FPGA, 645 CLBS, 472.5 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 362 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 265 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144
FPGA, 645 CLBS, 362 MHz, PQFP144 22 X 22 MM, 0.50 MM PITCH, EQFP-144
FPGA, 645 CLBS, 472.5 MHz, PBGA256 17 X 17 MM, 1 MM PITCH, FBGA-256
|
Altera International Limited
|
| HM514258AZP-8 HM514258AZP-12 |
80ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
120ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
|
Hitachi Semiconductor
|
| HM514260DLJI-7 HM514260DLJI-8 |
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
|
