| PART |
Description |
Maker |
| S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| MX23L12822 MX23L12822MC-12 MX23L12822YC-12 |
128M-BIT (8M x 16 / 4M x 32) MASK ROM WITH PAGE MODE
|
MACRONIX INTERNATIONAL CO LTD
PROM
MCNIX[Macronix International]
|
| S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| W29GL064CB7S W29GL064CH7B W29GL064CL7B W29GL064CT7 |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| W29GL256PL9B W29GL256PL9T-TR W29GL256PH9T W29GL256 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| AM29PL320DB70WPI |
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 1M X 32 FLASH 3V PROM, 70 ns, PBGA84
|
Advanced Micro Devices, Inc.
|
| MX28F128J3XCC-15 MX28F128J3 MX28F128J3RBC-15 MX28F |
128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| MX26L12811MC MX26L12811MC-12 |
128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
|
List of Unclassifed Manufacturers
|
| MX28F128J3 MX28F128J3TBC-15 |
EEPROM
128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
ETC
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M5M44400BJ M5M44400BL M5M44400BRT-5 M5M44400BRT-5S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM
(BJ/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric Semiconductor
|
