| PART |
Description |
Maker |
| ER3400 ER3400IR ER3400HR |
4096 Bit Electrically Alterable Read Only Memory
From old datasheet system
4096 Bit Electrically Alterable ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
General Semiconductor
|
| AT71201M |
Full field image sensor, 4096 x 4096 pixels, 4 x 40 MHz
|
Atmel
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| S3P7544 |
Single-chip CMOS microcontroller, 512 x 4-bit RAM, 4096 x 8-bit ROM
|
Samsung semiconductor
|
| SLA24C32-S-3/P SLA24C32-D-3/P Q67100-H3235 Q67100- |
32 Kbit 4096 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 32千位4096 × 8位串行CMOS EEPROM的，I2C同步2线总线
32 Kbit 4096 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
|
SIEMENS AG
Siemens Semiconductor Group
|
| Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns
4M x 1 Bit FPM DRAM 3.3 V 50 ns
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
4M x 1 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UPB424C UPB424D |
4096 BIT BIPOLAR TTL
|
NEC
|
| HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| TMM315D |
4096 Word x 1 Bit Static RAM
|
Toshiba
|
| AM27S25 |
4096-Bit Bipolar Registered PROM
|
AMD
|
