| PART |
Description |
Maker |
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36/1M × 18）流水线双氰胺同步静态存储器
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62157EV18LL-55BVXI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor, Corp.
|
| CY7C1441AV33 CY7C1443AV33 CY7C1447AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1460AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
