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SSG35C20Y - 可控硅| 200伏五（DRM）的| 35A条口（T）的有效值| FBASE受体- HW30 可控硅| 400V五（DRM）的| 35A条口（T）的有效值| FBASE受体- HW30 TRIAC|600V V(DRM)|35A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|35A I(T)RMS|FBASE-R-HW30

SSG35C20Y_3439232.PDF Datasheet


Part No.	SSG35C20Y SSG35C40Y SSG35C60Y
Description	可控硅\| 200伏五（DRM）的\| 35A条口（T）的有效值\| FBASE受体- HW30 可控硅\| 400V五（DRM）的\| 35A条口（T）的有效值\| FBASE受体- HW30 TRIAC\|600V V(DRM)\|35A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|35A I(T)RMS\|FBASE-R-HW30
File Size	105.62K / 2 Page
Maker	N/A
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