| PART |
Description |
Maker |
| M2S56D40ATP-75A M2S56D30ATP-10 M2S56D30ATP-10L M2S |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MB81N643289 MB81N643289-50 MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM
|
Fujitsu Microelectronics
|
| EM42AM1644RTA-5FE EM42AM1644RTA-6FE EM42AM1644RTA- |
Double DATA RATE SDRAM
128Mb (2M】4Bank】16) Double DATA RATE SDRAM
128Mb (2M隆驴4Bank隆驴16) Double DATA RATE SDRAM
128Mb (2M?4Bank?16) Double DATA RATE SDRAM
128Mb (2M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| EM47FM1688MCA-15 |
Double DATA RATE 3 SDRAM
|
Eorex Corporation
|
