| PART |
Description |
Maker |
| FGH40T70SHD-F155 |
700 V, 40 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FRL234R FN3229 FRL234D FRL234H |
4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFETs
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| R7222407 R7221607 R7220607 R7222207 R7222607 R7220 |
700 A, 600 V, SILICON, RECTIFIER DIODE
Fast Recovery Rectifier (700 Amperes Average 2600 Volts)
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| 3N70L-TN3-R 3N70G-TN3-R 3N70L-TM3-T 3N70G-TM3-T |
3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N70L-TF1-T 4N70G-TF1-T 4N70L-TF3-T |
4 Amps, 700 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| STW20NK70Z |
20 A, 700 V, 0.285 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
STMICROELECTRONICS
|
| CAT4104 |
700 mA Quad Channel Constant Current LED Driver
|
ON Semiconductor
|
| MMFT2406T1-D |
Power MOSFET 700 mA, 240 Volts N-Channel SOT-223
|
ON Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
