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R1LA1616RBG-8SI - Memory>Low Power SRAM

R1LA1616RBG-8SI_3321009.PDF Datasheet


 Full text search : Memory>Low Power SRAM
 Product Description search : Memory>Low Power SRAM


 Related Part Number
PART Description Maker
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
Electronic Theatre Controls, Inc.
White Electronic Designs
WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W 20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
White Electronic Designs Corporation
AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 Super Low Power Slow SRAM - 2Mb
x16 SRAM
Hynix Semiconductor
HY62VF08401C HY62VF08401C-SS55I 512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
HYNIX SEMICONDUCTOR INC
BS62LV1027 BS62LV1027PIP70 BS62LV1027SCG70 BS62LV1 Asynchronous 1M(128Kx8) bits Static RAM
LM5035 PWM Controller with Integrated Half-Bridge and SyncFET Drivers; Package: TSSOP EXP PAD; No of Pins: 20
LM5041A Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
LM5041 Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 非常低功电压的CMOS的SRAM
LM5033 100V Push-Pull Voltage Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDSO32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 55 ns, PDIP32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, UUC
http://
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
BRILLIANCE SEMICONDUCTOR INC
HY62UF08401C-SSI HY62UF08401C-DSI High Speed, Super Low Power and 4Mbit Full CMOS SRAM 高速,超低功耗和4Mbit全CMOS SRAM
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
M68Z128W M68Z128W-70N1T M68Z128WN 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 3V的,1兆位的输128KB的x8低功耗SRAM启用
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
UC62LV4096KI-25 UC62LV4096 UC62LV4096AC-20 UC62LV4 Low Power CMOS SRAM 低功耗CMOS SRAM
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- 2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
 
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