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GS816136BD-250 - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816136BD-250_3316948.PDF Datasheet


 Full text search : 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs


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PART Description Maker
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CY7C1049B CY7C1049B-17VC CY7C1049B-17VI CY7C1049B- 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 20 ns, PDSO36
CIR 13C 13#12 SKT PLUG 512K X 8 STANDARD SRAM, 20 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 17 ns, PDSO36
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
http://
AS7C4096A-12TCN AS7C4096A-15JI IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K X 8 STANDARD SRAM, 15 ns, PDSO36
Alliance Memory, Inc.
ALLIANCE MEMORY INC
AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC 512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
TC55VL818FF-75 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM)
Toshiba Corporation
GS8160V36CGT-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PQFP100
GSI Technology, Inc.
TC554001FTI-85V TC554001FI-85V 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
Toshiba Corporation
Toshiba, Corp.
GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
Electronic Theatre Controls, Inc.
GSI Technology
TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)
Toshiba Corporation
Toshiba, Corp.
KM29N040T 512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
SAMSUNG SEMICONDUCTOR CO. LTD.
CY62148-55 CY62148-70 CY62148L-55SC 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
 
 Related keyword From Full Text Search System
GS816136BD-250 bus switch GS816136BD-250 npn GS816136BD-250 Stmicroelectronic GS816136BD-250 Microcontroller GS816136BD-250 的参数
GS816136BD-250 Micropower GS816136BD-250 Reset GS816136BD-250 описание GS816136BD-250 port GS816136BD-250 schematic
 

 

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