| PART |
Description |
Maker |
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK6226-75C BUK6226-75C-15 |
N-channel TrenchMOS FET
N-channel TrenchMOS FET Rev. 01 ?4 October 2010
|
NXP Semiconductors N.V.
|
| PHD55N03LTA PHB55N03LTA PHP55N03LTA PHD55N03LTA118 |
55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
TrenchMOS TM Logic Level FET
TrenchMOS(TM)Logic Level FET
|
NXP SEMICONDUCTORS
Philips
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| PHP34NQ11T |
N-channel Trenchmos (tm) standard level FET
From old datasheet system
N-channel TrenchMOS⑩ standard level FET
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHB11N03LT PHB_PHD11N03LT_1 PHD11N03LT |
N-channel TrenchMOS transistor Logic level FET
From old datasheet system
N-channel TrenchMOS TM transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
|
| SI4884 SI4884-02 |
TrenchMOS(tm) logic level FET
From old datasheet system
TrenchMOS? logic level FET
TrenchMOS⑩ logic level FET
TrenchMOS logic level FET
TrenchMOSlogic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN5R9-30YL |
N-channel 6.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 6.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| BUK6507-75C |
N-channel TrenchMOS FET
|
NXP Semiconductors
|
