| PART |
Description |
Maker |
| ECG340 ECG330 ECG330W ECG331 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-92VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-220
|
|
| 92PU57 92PU52 92PU45 92PU02 92PU51 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-237VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 40V的五(巴西)总裁| 800mA的一(c)|37VAR TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-237VAR 晶体管|晶体管|达林顿|叩| 40V的五(巴西)总裁|甲一(c)|37VAR TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|叩| 40V的五(巴西)总裁| 800mA的一(c)|37VAR TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 2A I(C) | TO-237VAR
|
Flambeau, Inc. GE Security, Inc.
|
| GES5817J1 GES6221J1 GES6016J1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 40V的五(巴西)总裁|92 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-92 晶体管|晶体管| npn型| 150伏五(巴西)总裁|92 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 晶体管|晶体管|叩| 60V的五(巴西)总裁|2
|
Integrated Device Technology, Inc. Central Semiconductor, Corp.
|
| JANTX2N2222AUB JANS2N2222AL |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | TO-206AA 晶体管|晶体管|叩| 50V五(巴西)总裁| 800mA的一(c)|06AA
|
Cystech Electonics, Corp.
|
| BC440-4 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39 Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BC440-5 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39 Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| 2N1701 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2.5A I(C) | TO-8
|
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
| 2N1543 2N1535 2N1535A 2N1136 2N1136A |
Trans GP BJT NPN 40V 0.5A 3-Pin TO-5 SILICON PNP TRANSISTOR
|
New Jersey Semiconductor
|
| NEL230397 NEM2708B20 NEM2310B20 NEM1725B20 NEL2301 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | STX-M3 TRANSISTOR | BJT | NPN | 3.6A I(C) | RFMOD TRANSISTOR | BJT | NPN | 7.2A I(C) | RFMOD 晶体管|晶体管|叩| 7.2AI(丙)| RFMOD TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 600MA I(C) | STX-M3 晶体管|晶体管|叩| 20V的五(巴西)总裁| 600毫安一(c)|希捷- M3 TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-57CVAR 晶体管|晶体管|叩| 4.5AI(丙)|7CVAR
|
Abracon, Corp. Renesas Electronics, Corp.
|
| BFX17 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1A I(C) | TO-5 晶体管|晶体管|叩| 40V的五(巴西)总裁| 1A条一(c)| Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
TE Connectivity, Ltd. Seme LAB
|
| PG1523 PG1520 PG1522 PG1521 PG1500 |
High Voltage 1.5A, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | TO-3 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | TO-3 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-3 晶体管|晶体管|叩| 30V的五(巴西)总裁|甲一(c)|
|
ON Semiconductor
|