| PART |
Description |
Maker |
| HN58C65 HN58C65FP-25 HN58C65P-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
HITACHI[Hitachi Semiconductor]
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| LC3564CT-55U LC3564CM LC3564CT LC3564CM-55U LC3564 |
64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins
|
SANYO[Sanyo Semicon Device]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M58658P |
320-BI(20-Word by 16-BIT) Electrically alterable rom
|
Mitsubishi Electric Corporation
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| SLA24C64 |
64 Kbit (8192 ×8 bit) Serial CMOS-EEPROM with IIC Synchronous 2-Wire Bus(64K(8192 ×8 串行CMOS-EEPROM(带有IIC同步2线控)
|
SIEMENS AG
|
| MR27V3255D |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 8-Double Word x 32-Bit or 16-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
