| PART |
Description |
Maker |
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFU550X |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU550A |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU530X |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU520X BFU520X-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU690F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFG540W_XR BFG540 BFG540_X BFG540_XR BFG540W BFG54 |
NPN 9GHz wideband transistor
From old datasheet system
NPN 9 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管（npn型第六代赫兹宽带晶体管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
