PART |
Description |
Maker |
AM29F200A AM29F200AB-120EC AM29F200AB-120ECB AM29F |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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AMD[Advanced Micro Devices]
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AM29LV200T-100ECB AM29LV200T-100EE AM29LV200B-120E |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-33 RoHS Compliant: No 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO48 Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
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S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
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Spansion Inc. Spansion, Inc. SPANSION LLC
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AM29F200BB-120DPI1 AM29F200BB-90DG1 AM29F200BB-90D |
128K X 16 FLASH 5V PROM, 70 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
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SPANSION LLC http://
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S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位).0伏的CMOS只同步读/写,页模式闪 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
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Spansion, Inc. Spansion Inc. SPANSION LLC
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S29GL032M10BBIR20 S29GL032M10FBIR20 S29GL032M10TBI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology
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SPANSION
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S29GL064M90TAIR12 S29GL064M90TAIR40 S29GL064M90TAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
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SPANSION[SPANSION]
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AM29LV002B-150FCB AM29LV002B-90RFCB AM29LV002B-150 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区闪存 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区闪存
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Advanced Micro Devices, Inc.
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AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op. Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes Am29LV400B KGD (Known Good Die Supplement) INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位).0伏的CMOS只引导扇区闪 CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
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http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. Electronic Theatre Controls, Inc.
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S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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SPANSION
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AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory IC SMT SRAM 128K X 8 70NS 5V SOP-32 SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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AM29LV400B100WACB AM29LV400B150WACB AM29LV400B90RW |
4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 150ns 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 90ns
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Advanced Micro Devices
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