| PART |
Description |
Maker |
| WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613
120ns; 512K x 8 monolithic SRAM, SMD 5962-95613
70ns; 512K x 8 monolithic SRAM, SMD 5962-95613
85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
|
White Electronic Designs
|
| KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI88128CDXZI |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
White Electronic Designs Corporation
|
| EDI88130CXCC EDI88130CXCI EDI88130CXCM EDI88130CXC |
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
|
http://
|
| HY62KF16403E-SD70I HY62KF16403E-SD55I |
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
From old datasheet system
|
Hynix Semiconductor
|
| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS61LV25616 IS61LV25616_01 IS61LV25616-10B IS61LV2 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IC,SRAM,256KX16,CMOS,SOJ,44PIN,PLASTIC
|
Integrated Silicon Solu...
ISSI[Integrated Silicon Solution, Inc]
|
| EM6156K800VTA-55 EM6156K1600VTA-55 EM6156K800WTA-5 |
256Kx16 LP SRAM
|
Eorex Corporation
http://
|
| EDI88512C_LP-C EDI88512C_LP-N EDI88512C/LP-N EDI88 |
100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs
|
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
